Published March 20, 1989
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Journal Article
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Broadband tunability of gain-flattened quantum well semiconductor lasers with an external grating
Chicago
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Abstract
Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and applied to a semiconductor quantum well laser with an optimized length of gain region. The predicted very broadband tunability of quantum well lasers is confirmed experimentally by grating-tuning of uncoated lasers over 85 nm, with single longitudinal mode output power exceeding 200 mW.
Additional Information
© 1989 American Institute of Physics. Received 6 December 1988; accepted 18 January 1989. The research described in this letter was conducted in the Applied Physics Department, California Institute of Technology, with the support of National Science Foundation and the Office of Naval Research. M. Mittelstein gratefully acknowledged support from a Newport Research Award for this project.Files
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