Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published March 1989 | public
Journal Article Open

Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection

Abstract

Doped GaAs/AlGaAs multiple quantum well structures were grown on Si substrates by molecular-beam epitaxy. The crystallinity of the epitaxial layers was examined by cross-sectional transmission electron microscopy and an x-ray rocking curve technique. The threading dislocation density of the multiple quantum well region was estimated to be 108 cm–2 by transmission electron microscopy. The x-ray rocking curve measurement revealed a full width at half-maximum of 380 arcsec, with no superlattice peak observed. Electrical and optical characterizations by tunneling current and intersubband infrared absorption showed comparable properties with similar structures grown directly on a GaAs substrate. The effect of crystallinity on the electrical and optical properties of the multiple quantum well structures is discussed.

Additional Information

© 1989 American Vacuum Society. (Received 22 September 1988; accepted 22 September 1988) The authors would like to thank Dr. R. Alt at Aerospace Corporation for FTIR measurements. This work was supported in part by DOD-DRIP under ONR and ARO and by Intel-Micro program.

Files

MIIjvstb89.pdf
Files (726.7 kB)
Name Size Download all
md5:883ef76ce504fd94ef28c378de884873
726.7 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 16, 2023