Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection
Abstract
Doped GaAs/AlGaAs multiple quantum well structures were grown on Si substrates by molecular-beam epitaxy. The crystallinity of the epitaxial layers was examined by cross-sectional transmission electron microscopy and an x-ray rocking curve technique. The threading dislocation density of the multiple quantum well region was estimated to be 108 cm–2 by transmission electron microscopy. The x-ray rocking curve measurement revealed a full width at half-maximum of 380 arcsec, with no superlattice peak observed. Electrical and optical characterizations by tunneling current and intersubband infrared absorption showed comparable properties with similar structures grown directly on a GaAs substrate. The effect of crystallinity on the electrical and optical properties of the multiple quantum well structures is discussed.
Additional Information
© 1989 American Vacuum Society. (Received 22 September 1988; accepted 22 September 1988) The authors would like to thank Dr. R. Alt at Aerospace Corporation for FTIR measurements. This work was supported in part by DOD-DRIP under ONR and ARO and by Intel-Micro program.Files
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- CaltechAUTHORS:MIIjvstb89
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2007-09-19Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field