Published January 29, 2007
| Published
Journal Article
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Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities
Chicago
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Abstract
The quality factors of modes in nearly identical GaAs and Al0.18Ga0.82As microdisks are tracked over three wavelength ranges centered at 980, 1460, and 1600 nm, with quality factors measured as high as 6.62×10^5 in the 1600 nm band. After accounting for surface scattering, the remaining loss is due to sub-band-gap absorption in the bulk and on the surfaces. The observed absorption is, on average, 80% greater in AlGaAs than in GaAs and is 540% higher in both materials at 980 nm than at 1600 nm.
Additional Information
© 2007 American Institute of Physics. (Received 24 October 2006; accepted 20 December 2006; published online 31 January 2007) Two of the authors (C.P.M. and K.S., respectively) would like to thank the Moore Foundation and the Hertz Foundation for their graduate fellowship support. One of the authors (K.H.L.) thanks the Wingate Foundation. One of the authors (H.K.) has been supported by NSF Grant No. 0304678.Attached Files
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Additional details
- Eprint ID
- 7342
- Resolver ID
- CaltechAUTHORS:MICapl07
- Gordon and Betty Moore Foundation
- Fannie and John Hertz Foundation
- Wingate Foundation
- NSF
- PHY-0304678
- Created
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2007-02-01Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field