Published December 15, 1971
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Journal Article
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Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
- Creators
- McCaldin, J. O.
- Sankur, H.
Chicago
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Abstract
Si was diffused along the evaporated Al layer of an integrated-circuit structure at temperatures between 360 and 560 °C, and the resulting concentration profile analyzed by electron microprobe. The Si solubility was found to agree with literature values for Si in wrought Al. The Si diffusivity was found to be substantially enhanced, however, probably due to a high density of imperfections in the evaporated Al film. Our measured diffusivities indicate an activation energy EA ~= 0. 8 eV, about 40% less than the value for Si in wrought Al.
Additional Information
©1971 The American Institute of Physics (Received 19 July 1971; revised 28 September 1971) Work supported in part by Eastman Kodak Research Grant in Solid State Science.Files
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- Resolver ID
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