Published October 28, 2005
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Journal Article
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Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As
Chicago
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Abstract
A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
Additional Information
© 2005 The American Physical Society (Received 5 May 2005; published 28 October 2005) This work was supported by DARPA under grant No. DSO/SPINS-MDA 972-01-1-0024. K.D.G. acknowledges support as research assistant of the Research Fund Flanders (FWO).Attached Files
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Additional details
- Eprint ID
- 1227
- Resolver ID
- CaltechAUTHORS:MASprl05
- Defense Advanced Research Projects Agency (DARPA)
- MDA 972-01-1-0024
- Fonds Wetenschappelijk Onderzoek (FWO)
- Created
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2006-01-05Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field