Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published November 21, 1988 | public
Journal Article Open

Simultaneous planar growth of amorphous and crystalline Ni silicides

Abstract

We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.

Additional Information

Copyright © 1988 American Institute of Physics. (Received 5 April 1988; accepted 7 September 1988) The authors are indebted to Dr. B.S. Lim for his participation during the initial stage of this work, and G. Mendendilia (MML) for technical assistance. This work is supported at Caltech by National Science Foundation - Materials Research Groups grant DMR-8811795.

Files

MAEapl88.pdf
Files (685.6 kB)
Name Size Download all
md5:400fa61d6f3abdc98eacd34166b94dae
685.6 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 16, 2023