Single contact tailored gain phased array of semiconductor lasers

Creators: Lindsey, C. P.; Kapon, E.; Katz, J.; Margalit, S.; Yariv, A.

Abstract

We demonstrate a single contact tailored gain-guided array in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated array of six (GaAl)As lasers with 5-µm separations and widths varying linearly between 3 and 8 µm had a single lobed far field 2° wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large-scale processing techniques. We also show that in such an asymmetric gain-guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far-field patterns differing only slightly from that of the fundamental.

Additional Information

© 1984 American Institute of Physics. Received 8 June 1984; accepted 11 July 1984. The research described in this letter was performed jointly by the Applied Physics Department, California Institute of Technology, under contracts with the Office of Naval Research and the National Science Foundation, and the Jet Propulsion Laboratory under contract with the National Aeronautics and Space Administration. C.P. Lindsey would like to acknowledge the support of an ARCS fellowship. E. Kapon would like to acknowledge the support of the Weizmann post-doctoral fellowship. The authors would also like to thank Mr. Frank So for assistance with the proton implantations.

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