Injection mechanisms in GaAs diffused electroluminescent junctions

Abstract

Injection mechanisms responsible for the electroluminescence in GaAs diffused diodes are studied by examining the behavior of the emission peaks as a function of injection level, doping level, temperature, and depletion-layer widths. Three different injection mechanisms seem to be operative in providing radiation at near-band-gap energies. Models for two of these are proposed and tested. The nature of the third emission remains an open question.

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