Published August 15, 1969
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Journal Article
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Thermal noise in double injection
- Creators
- Lee, D. H.
- Nicolet, M. -A.
Chicago
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Abstract
Noise measurements from 500 kHz to 22 MHz and at ambient temperatures T between 140 and 350°K have been performed on a double-injection silicon diode as a function of operating point. The results indicate that at high frequencies, (i) the noise increases linearly with T, and (ii) the noise also depends linearly on the differential conductance g at the same frequency. Within at most a 5% error, the high-frequency noise is quantitatively represented by Nyquist's formula 〈i2〉=4kTgΔf throughout the experimental range. This proves the thermal nature of the high-frequency noise of double injection. Possible limits on this result and its comparison with alternative theories are discussed.
Additional Information
©1969 The American Physical Society. Received 20 December 1968. We thank Keith Taylor, Tektronix, Beaverton, Ore., for his valuable assistance in the design and construction of the preamplifier. The double-injection diode was kindly provided by O. J. Marsh, Hughes Research Laboratories, Malibu, Calif. We also thank H. R. Bilger, Olahoma State University, Stillwater, Okla., for his very active involvement in this project, his help, and many fruitful discussions. The financial support of the NASA Electronics Research Center, Cambridge, Mass., under XGR 05-002-100, is very gratefully acknowledged.Files
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