Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published November 27, 1973 | public
Journal Article Open

Semiempirical calculation of deep levels: divacancy in Si

Abstract

A study of the electronic levels associated with the divacancy in silicon is reported. The extended Huckel theory is shown to reproduce the band structure of silicon. The electronic levels of the divacancy are calculated by considering a periodic array of large unit cells each containing 62 atoms; a 64 atom perfect cell with two atoms removed to form the divacancy. The results are found to be in qualitative agreement with the results of EPR and infrared absorption measurements.

Additional Information

© Institute of Physics 1973. Received 26 March 1973, in final form 11 June 1973, Print publication: Issue 23 (27 November 1973) The authors would like to acknowledge discussions with R P Messmer, G D Watkins, and F P Larkins.

Files

LEEjpc73.pdf
Files (731.3 kB)
Name Size Download all
md5:d4647e04f0959e4c3ab3a9ff75d3d5a3
731.3 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 13, 2023