Published March 12, 1992
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Journal Article
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1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching
Abstract
The characteristics of 1.57 μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices.
Additional Information
©1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. We thank E. Kapon for discussion of the work. The work is partially supported by Office of Naval Research under the contract NooO14-89-C-0309.Files
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2005-09-22Created from EPrint's datestamp field
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