Published September 28, 1989
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Journal Article
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Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes
Chicago
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Abstract
Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50-μm across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW).
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