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Published May 10, 1993 | public
Journal Article Open

Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence

Abstract

The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3

Additional Information

© 1993 American Institute of Physics. Received 21 December 1992; accepted 15 March 1993. The authors would like to acknowledge the support of the National Science Foundation. One of us (R.B.L.) would like to acknowledge the support of a National Defense Science and Engineering Graduate Fellowship.

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August 22, 2023
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October 16, 2023