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Published May 15, 1977 | public
Journal Article Open

Barrier-controlled low-threshold pnpn GaAs heterostructure laser

Abstract

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm^2) room-temperature threshold currents.

Additional Information

© 1977 American Institute of Physics. Received 1 November 1976; accepted for publication 11 March 1977. Research supported by the Office of Naval Research and the National Science Foundation.

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August 22, 2023
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