Published May 15, 1977
| public
Journal Article
Open
Barrier-controlled low-threshold pnpn GaAs heterostructure laser
- Creators
- Lee, C. P.
-
Gover, A.
- Margalit, S.
- Samid, I.
- Yariv, A.
Chicago
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Abstract
Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm^2) room-temperature threshold currents.
Additional Information
© 1977 American Institute of Physics. Received 1 November 1976; accepted for publication 11 March 1977. Research supported by the Office of Naval Research and the National Science Foundation.Files
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Additional details
- Eprint ID
- 10027
- Resolver ID
- CaltechAUTHORS:LEEapl77a
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2008-04-07Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field