Published August 15, 1984
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Journal Article
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11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature
- Creators
- Lau, K. Y.
- Bar-Chaim, N.
- Ury, I.
- Yariv, A.
Chicago
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Abstract
We have demonstrated a direct modulation bandwidth of up to 11 GHz in a window GaAlAs buried heterostructure laser fabricated on a semi-insulating substrate, operating at room temperature.
Additional Information
© 1984 American Institute of Physics. Received 10 February 1984; accepted 14 May 1984. This research was supported by the Defense Advance Research Project Agency and the Naval Research Laboratory. We would like to thank J.S. Smith and Dr. S. Margalit for helpful discussions on this subject.Files
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- Eprint ID
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- Resolver ID
- CaltechAUTHORS:LAUapl84c
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