Published February 1, 1984
| public
Journal Article
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Direct modulation of semiconductor lasers at f>10 GHz by low-temperature operation
- Creators
- Lau, K. Y.
- Harder, Ch.
- Yariv, A.
Chicago
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Abstract
Using a 175-µm-long buried-heterostructure laser fabricated on a semi-insulating substrate operating at −50 °C, a direct amplitude modulation bandwidth in excess of 10 GHz has been achieved.
Additional Information
© 1984 American Institute of Physics. Received 19 September 1983; accepted 8 November 1983. The authors thank Dr. N. Bar-Chaim and Dr. I. Ury for fabricating the lasers used in this experiment. This research was supported by the Defense Advance Research Project Agency and by the Office of Naval Research.Files
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Additional details
- Eprint ID
- 9807
- Resolver ID
- CaltechAUTHORS:LAUapl84a
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2008-03-18Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field