Published October 1, 1983
| public
Journal Article
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Longitudinal mode spectrum of GaAs injection lasers under high-frequency microwave modulation
- Creators
- Lau, K. Y.
- Harder, Ch.
- Yariv, A.
Chicago
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Abstract
Experimental observations of the lasing spectrum of a single mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single longitudinal mode for optical modulation depths up to ~80%, beyond which the lasing spectrum becomes multimoded, whose envelope width increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which enables one to predict the dynamic lasing spectrum of a laser from its cw lasing spectra at various output powers.
Additional Information
© 1983 American Institute of Physics. Received 5 May 1983; accepted 20 June 1983. This research was supported by the Defense Advance Research Project Agency, the National Science Foundation under the Optical Communication Program, and by the Army Research Office.Files
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- Resolver ID
- CaltechAUTHORS:LAUapl83c
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