Published August 15, 1979
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Solar furnace annealing of amorphous Si layers
Chicago
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Abstract
We demonstrate that a simple Al solar reflector can be used to induce solid-phase epitaxy of amorphous Si layers obtained either by ion-implantation or ion-deposition techniques. The annealing can be accomplished in air and takes a few seconds for a 1-cm^2 sample area. For ion-implanted samples, the regrown layers are defect free on <100> substrates, and contain microtwins on <111> substrates. For deposited layers on <100> substrates the degree of epitaxy is not as good as that obtained by furnace annealing (550 followed by 950°C annealing).
Additional Information
Copyright © 1979 American Institute of Physics. Received 9 April 1979; accepted for publication 25 May 1979. The financial support of the Office of Naval Research (L. Cooper) is gratefully acknowledged. One of the authors (M. von Allmen) thanks the Swiss Nationalfonds for financial support.Files
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