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Published July 15, 1978 | public
Journal Article Open

Epitaxial growth of deposited amorphous layer by laser annealing

Abstract

We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.

Additional Information

Copyright © 1978 American Institute of Physics. Received 20 March 1978; accepted for publication 9 May 1978. We acknowledge the valuable discussion with Dr. J. O. McCaldin and the partial financial support of the Office of Naval Research (L. Cooper).

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