Published December 17, 1990
| Published
Journal Article
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Studies of silicon photoelectrochemical cells under high injection conditions
- Creators
- Kumar, Amit
-
Lewis, Nathan S.
Abstract
The behavior of Si/CH₃OH-dimethylferrocene^(+/0) junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm² for samples with an n⁺-diffused back region, point contacts on the back surface, and with a base of thickness 390 µm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8 ± 0.1 and (2.6 ± 1.5) × 10⁻⁸ A/cm², respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH₃OH interface.
Additional Information
© 1990 American Institute of Physics. (Received 2 July 1990; accepted 21 September 1990) We thank the National Science Foundation for support of this work. This is contribution No. 8167 from the Caltech Division of Chemistry and Chemical Engineering. We also thank Ronald A. Sinton and Richard M. Swanson of the Stanford Electronics Laboratory (Stanford, CA) for invaluable discusisons and for supplying the samples used in this study. A. K. acknowledges the Department of Education for a Research Fellowship.Attached Files
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Additional details
- Eprint ID
- 2423
- Resolver ID
- CaltechAUTHORS:KUMapl90a
- Department of Energy (DOE)
- Created
-
2006-04-03Created from EPrint's datestamp field
- Updated
-
2023-04-19Created from EPrint's last_modified field
- Other Numbering System Name
- Caltech Division of Chemistry and Chemical Engineering
- Other Numbering System Identifier
- 8167