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Published October 1, 1982 | public
Journal Article Open

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Abstract

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.

Additional Information

© Copyright 1982 IEEE. Reprinted with permission. Manuscript received April 1, 1982; revised June 4, 1982. This work was supported in part by the Office of Naval Research and the National Science Foundation (Optical Communication Program).

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August 22, 2023
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