Published November 1, 1982
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Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration
Abstract
Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained.
Additional Information
Copyright © 1982 American Institute of Physics Received 1 July 1982; accepted for publication 24 August 1982 This research was supported by the Office of Naval Research and by the Air Force Office of Scientific Research.Files
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