Published April 15, 1982
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Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP
Abstract
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.
Additional Information
Copyright © 1982 American Institute of Physics Received 21 December 1981; accepted for publication 19 January 1982 This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program).Files
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