Published August 1, 2006
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Journal Article
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A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon
- Creators
- Komijani, Abbas
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Hajimiri, Ali
Abstract
A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm^2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband.
Additional Information
© Copyright 2006 IEEE. Reprinted with permission. Manuscript received December 4, 2005; revised March 23, 2006. The authors thank DARPA's trusted foundry program for chip fabrication. They also appreciate valuable help from S. Weinreb, A. Babakhani, A. Natarajan, B. Analui, X. Guan, E. Afshari, U. Pfeiffer, E. Keehr, A. Hassibi, and M. Manteghi. The technical support for CAD tools from Agilent Technologies, Zeland Software Inc., and Ansoft Corp. is also appreciated. Special Issue on the IEEE 2005 Custom Integrated Circuits Conference, 43(8), August 2006Files
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Additional details
- Eprint ID
- 2959
- Resolver ID
- CaltechAUTHORS:KOMieeejssc06
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2006-11-01Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field