Demonstration of an erbium-doped microdisk laser on a silicon chip
Abstract
An erbium-doped microlaser is demonstrated utilizing SiO2 microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's) with intrinsic optical quality factors of up to 6×10^7 and were doped with trivalent erbium ions (peak concentration ~3.8×10^20 cm^−3) using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the 4I15/2-->4I13/2 erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550-nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 µW and allowed measuring the spontaneous emission coupling factor: beta[approximate]1×10^−3.
Additional Information
© 2006 The American Physical Society (Received 1 August 2006; published 16 November 2006) This work was supported by DARPA and the Caltech Lee Center for Advanced Networking. T.J.K. acknowledges the Caltech Center of the Physics of Information for support. The Dutch part of this work is part of the research program of FOM which is financially supported by NWO. The authors thank Ali Dabirian from the MPQ for the finite-element numerical modeling.Attached Files
Published - KIPpra06.pdf
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Additional details
- Eprint ID
- 6390
- Resolver ID
- CaltechAUTHORS:KIPpra06
- Defense Advanced Research Projects Agency (DARPA)
- Caltech Lee Center for Advanced Networking
- Caltech Center for the Physics of Information
- Stichting voor Fundamenteel Onderzoek der Materie (FOM)
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)
- Created
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2006-12-06Created from EPrint's datestamp field
- Updated
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2023-06-01Created from EPrint's last_modified field