Published November 1, 1991
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A grid amplifier
Chicago
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Abstract
A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.
Additional Information
© Copyright 2006 IEEE. Reprinted with permission Manuscript received May 13, 1991; revised June 21, 1991. The work done at Caltech was supported by the Army Research Office, the Northrop Corporation, and a fellowship from the Rockwell International Trust. The work done at the Jet Propulsion Laboratory was supported by the Innovative Science and Technology Office at SDIO. J. Hacker holds an NSERC Fellowship from Canada, and M. DeLisio holds an NSF Fellowship.Files
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