Published January 22, 1996
| public
Journal Article
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Nonlinear optical properties of photoresists for projection lithography
- Creators
- Kewitsch, Anthony S.
- Yariv, Amnon
Chicago
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Abstract
Optical beams are self-focused and self-trapped upon initiating crosslinking in photoresists. This nonlinear optical phenomenon is apparent only for low average optical intensities and produces index of refraction changes as large as 0.04. We propose using the self-focusing and self-trapping phenomenon in projection photolithography to enhance the resolution and depth of focus.
Additional Information
©1996 American Institute of Physics (Received 8 September 1995; accepted 14 November 1995) This work was supported by ARPA's nonlinear optics (DSO) and lithography (MTO) programs.Files
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- 3359
- Resolver ID
- CaltechAUTHORS:KEWapl96
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