Bias-induced stress transitions in sputtered TiN films

Creators: Kattelus, H. P.; Tandon, J. L.; Sala, C.; Nicolet, M.-A.

Abstract

We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

Additional Information

© 1986 American Vacuum Society (Received 27 December 1985; accepted 28 February 1986) We are indebted in M. Erola (helsinki University) for the NRB analysis and B. K. Liew (Caltech) for his participation in measuring stress and resitivity. One of us (H.K.) likes to thnak J. A. Thornton (University of Illinois) and A. H. Hamdi (Caltech) for useful discussion. This work was financially supported in part by the Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California, and in part by the U.S. Army, Electronics Technology and Devices Laboratory (ERDACOM), Ft. Monmouth, New Jersey. At Applied Solar Energy Corporation, partial support was provided by Sandia National Laboratories (Len Beavis).

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