Published August 1980
| Published
Journal Article
Open
Large optical cavity AlGaAs injection lasers with multiple active regions
- Creators
- Katz, J.
- Bar-Chaim, N.
- Margalit, S.
- Yariv, A.
Chicago
An error occurred while generating the citation.
Abstract
A new type of AlGaAs injection laser is described. The structure consists of alternating p- and n-type layers of GaAs and AlxGa1−xAs . The electrical mode of operation of the device is that of a Shockley diode (SCR). Optically the device operates as a large optical cavity. Single transverse mode operation was observed with optical cavities larger than 4 µm.
Additional Information
Copyright © 1980 American Institute of Physics. Received 21 January 1980; accepted for publication 21 April 1980. One of the authors (JK) thanks the Northrop Foundation for their financial support. This research was supported by the Office of Naval Research and the National Science Foundation. A portion of this research was sponsored by the National Aeronautics and Space Administration under Contract NAS 7-100.Attached Files
Published - KATjap80.pdf
Files
KATjap80.pdf
Files
(240.6 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:8e99b0f4e7225be1f272358734bd65e1
|
240.6 kB | Preview Download |
Additional details
- Eprint ID
- 12344
- Resolver ID
- CaltechAUTHORS:KATjap80
- Northrop Foundation
- Office of Naval Research
- National Science Foundation
- NASA
- NAS 7-100
- Created
-
2008-11-12Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field