Published September 15, 1983
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Journal Article
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Phase-locked semiconductor laser array with separate contacts
Chicago
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Abstract
A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-µm-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.
Additional Information
Copyright © 1983 American Institute of Physics. Received 19 April 1983; accepted 20 June 1983. The research described in this letter was performed jointly by the Jet Propulsion Laboratory and the Applied Physics Department, California Institute of Technology, under contracts with the National Aeronautics and Space Administration, the Office of Naval Research and the National Science Foundation.Attached Files
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- Office of Naval Research
- National Science Foundation
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