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Published April 1, 1983 | Published
Journal Article Open

Diffraction coupled phase-locked semiconductor laser array

Abstract

A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (~3°) and peak power levels of 1 W have been obtained for 100-µm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.

Additional Information

Copyright © 1983 American Institute of Physics. Received 6 December 1982; accepted 10 January 1983. The research reported in this paper was carried out by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration. A portion of this research was sponsored by the Office of Naval Research and the National Science Foundation.

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