Published December 1, 1980
| Published
Journal Article
Open
Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents
- Creators
- Katz, J.
- Margalit, S.
- Wilt, D.
- Chen, P. C.
- Yariv, A.
Chicago
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Abstract
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 µm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.
Additional Information
Copyright © 1980 American Institute of Physics. Received 25 August 1980; accepted for publication 25 September 1980. This research was supported by the National Science Foundation and the Office of Naval Research under the Optical Communication Program.Attached Files
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Additional details
- Eprint ID
- 12341
- Resolver ID
- CaltechAUTHORS:KATapl80b
- National Science Foundation
- Office of Naval Research
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