Published July 15, 1980
| Published
Journal Article
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A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser
Chicago
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Abstract
A GaAlAs double-heterostructure laser has been monolithically integrated with a heterojunction bipolar transistor on a GaAs substrate. Integration is achieved by means of a mutually compatible structure formed by Be ion implantation. Typical pulsed threshold currents for the laser are 60 mA, and the transistors have a typical common-emitter current gain of 900.
Additional Information
© 1980 American Institute of Physics. Received 19 February 1980; accepted for publication 8 May 1980. This research was supported by the National Science Foundation and the Office of Naval Research.Attached Files
Published - KATapl80a.pdf
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KATapl80a.pdf
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Additional details
- Eprint ID
- 11086
- Resolver ID
- CaltechAUTHORS:KATapl80a
- National Science Foundation
- Office of Naval Research
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2008-07-16Created from EPrint's datestamp field
- Updated
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2023-06-01Created from EPrint's last_modified field