Published November 1, 1990
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Double-active-layer index-guided InGaAsP-InP laser diode
Abstract
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high characteristic temperature T0 was measured, and optical switching behavior was observed. A mode analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that both the Auger recombination in this special double-active-layer configuration and the temperature-dependent leakage current, which leads to uniform carrier distribution in both active regions, are essential to increase T0.
Additional Information
© Copyright 1990 IEEE. Reprinted with permission. Manuscript received March 20, 1990; revised June 19, 1990. This work was supported by the Defense Advanced Research Projects Agency and the Office of Naval Research. The authors acknowledge D. Armstrong for his technical help in the T0 measurement.Files
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