Published June 12, 1989
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Journal Article
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Carrier lifetimes in ion-damaged GaAs
- Creators
- Johnson, M. B.
- McGill, T. C.
- Paulter, N. G.
Chicago
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Abstract
Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×10^12 cm^−2 the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6±0.2 ps for a dose of 1×10^14 cm^−2. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose.
Additional Information
Copyright © 1989 American Institute of Physics. Received 5 December 1988; accepted 4 April 1989. The authors would like to acknowledge Al Gibbs of Los Alamos National Laboratories for the sample processing. One of us (M.B.J.) would like to thank Dr. A.T. Hunter of Hughes Research Laboratories for helpful discussions about this work. This work was supported in part by the Defense Advanced Research Projects Agency under contract No. N00014-84-K-0501.Files
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