Published February 27, 1989
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Journal Article
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Grain boundary amorphization reaction in thin films of elemental Cu and Y
- Creators
- Johnson, R. W.
- Ahn, C. C.
- Ratner, E. R.
Chicago
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Abstract
Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh vacuum dc ion beam deposition chamber. Room-temperature growth of an amorphous Cu-Y phase was observed with interdiffusion of the elemental Cu and Y. Transmission electron microscopy of as-prepared samples revealed a novel growth morphology; amorphous phase formation was observed both at the original Cu/Y interface and between the grains of the elemental Y. Estimates for the thermodynamic and kinetic factors underlying the grain boundary amorphization reaction are presented.
Additional Information
© 1989 American Institute of Physics. Received 17 October 1988; accepted 2 December 1988. We gratefully acknowledge several useful conversations with W.L. Johnson and H. Fecht and the assistance of J. Kittl during the early stages of this work. One of us (R.W.J.) wishes to acknowledge the Chaim Weizmann Foundation for financial support during the course of this work. Portions of this work were supported by the U.S. Department of Energy through contract No. DE-FG03-86ER45242. Primary support by the National Science Foundation-Materials Research Groups grant No. DMR 8421119 is gratefully acknowledged.Files
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