Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

Creators: Jackson, M. K.; Johnson, M. B.; Chow, D. H.; McGill, T. C.; Nieh, C. W.

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Abstract

The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≈12 ps) to 34 Å(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.

Additional Information

© 1989 American Institute of Physics. Received 16 September 1988; accepted 22 November 1988. The authors would like to thank R. Miles, Y. Rajakarunanayake, D. Ting, E. Yu, and A.T. Hunter for helpful discussions. This work was supported in part by the Office of Naval Research under contract No. N00014-84-K-0501, the Defense Advanced Research Projects Agency under contract No. N00014-84-C-0083, and the National Science Foundation under grant No. NMR8421119. Two of us (M.K.J. and D.H.C.) would like to acknowledge financial support from the Natural Sciences and Engineering Research Council of Canada, and International Business Machines Corporation, respectively.

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