Published April 17, 1989
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Radiation-induced interface phenomena: Decoration of high-energy density ion tracks
Abstract
The effect of 20 MeV Cl4 + ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.
Additional Information
©1989 The American Physical Society. Received 28 October 1988; accepted 31 January 1989. This work was supported in part at California Institute of Technology under the National Science Foundation's Materials Science Group Program (DMR84-21119), and partly by the National Swedish Board for Technical Development. We are especially indebted to Ulf Magnusson and Anders Soderbarg who generously provided a large part of the samples. Goran Possnert and Jonas Astrom are gratefully acknowledged for their valuable assistance with the accelerator.Files
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