Published August 4, 1997
| Published
Journal Article
Open
Pattern-Dependent Charging in Plasmas: Electron Temperature Effects
- Creators
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Hwang, Gyeong S.
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Giapis, Konstantinos P.
Chicago
Abstract
The differential charging of high-aspect-ratio dense structures during plasma etching is studied by two-dimensional Monte Carlo simulations. Enhanced electron shadowing at large electron temperatures is found to reduce the electron current density to the bottom of narrow trenches, causing buildup of large charging potentials on dielectric surfaces. These potentials alter the local ion dynamics, increase the flux of deflected ions towards the sidewalls, and result in distorted profiles. The simulation results capture reported experimental trends and reveal the physics of charging damage.
Additional Information
© 1997 The American Physical Society Received 5 December 1996; revised 18 February 1997 This material was based upon work supported by an NSF Career Award to K. P. G. (CTS-9623450).Attached Files
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Additional details
- Eprint ID
- 4802
- Resolver ID
- CaltechAUTHORS:HWAprl97
- NSF
- CTS-9623450
- Created
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2006-09-07Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field