Aspect ratio independent etching of dielectrics

Abstract

Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (<= 0.5 µm).

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