Published October 27, 2003
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Shouldering in B diffusion profiles in Si: Role of di-boron diffusion
- Creators
- Hwang, Gyeong S.
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Goddard, William A., III
Abstract
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B-s-B-i) diffusion can become as important as boron-interstitial pair (B-s-Si-i) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature (approximate to 1200 degrees C) postimplantion annealing of ultralow-energy (approximate to500 eV) implanted high-concentration (>10(19) cm(-3)) boron in silicon.
Additional Information
Copyright © 2003 American Institute of Physics. Received 26 March 2002; accepted 17 August 2003. The authors thank Masamitsu Uehara and Yuzuru Sato of Seiko-Epson Corporation for many helpful discussions. They thank Seiko-Epson Corporation for providing financial support. G.S.H. also thanks the Welch Foundation for their partial financial support. The facilities of the MSC are also supported by grants from DOE-ASCI, ARO/DURIP, NSF (CHE) ARO/MURI, NIH, Chevron-Texaco, Beckman Institute, 3M, Dow Chemical, Avery-Dennison, General Motors, Kellogg's, Asahi Chemical, and Nippon Steel.Files
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- 1674
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- CaltechAUTHORS:HWAapl03b
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2006-02-10Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field