Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory
Abstract
The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30 mK. Below temperatures of 3 K, the conductivity decreases [proportional]T^1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Anderson's transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments.
Additional Information
© 2007 The American Physical Society (Received 7 March 2007; revised 11 April 2007; published 7 June 2007) This research was supported by the DARPA/SPINS program and the Deutsche Forschungsgemeinschaft. We want to thank P. Wigen and A.H. MacDonald for valuable discussions.Attached Files
Published - HONprb07b.pdf
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Additional details
- Eprint ID
- 8481
- Resolver ID
- CaltechAUTHORS:HONprb07b
- Defense Advanced Research Projects Agency (DARPA)
- Deutsche Forschungsgemeinschaft (DFG)
- Created
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2007-08-15Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field