Published April 3, 1989
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Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
Abstract
Cathodoluminescence scanning electron microscopy is used to study AlxGa1−x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011-bar] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find that the aluminum concentration in the epilayers is dependent on the facet orientation, changing by as much as 35% from the value in the unpatterned areas. The transition in the aluminum concentration at a boundary between two facets is observed to be very abrupt.
Additional Information
Copyright © 1989 American Institute of Physics. Received 16 November 1988; accepted 30 January 1989. The authors would like to acknowledge Dhrubes Biswas for his contribution of data on the thickness of GaAs layers grown on a nonplanar substrate. This work was supported by the Office of Naval Research.Attached Files
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- Eprint ID
- 12285
- Resolver ID
- CaltechAUTHORS:HOEapl89a
- Office of Naval Research
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2008-11-04Created from EPrint's datestamp field
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