Published January 29, 1996
| Published
Journal Article
Open
Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy
- Creators
- He, Gang
-
Atwater, Harry A.
Chicago
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Abstract
In this letter, we report the synthesis of epitaxial SnxGe1–x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.
Additional Information
© 1996 American Institute of Physics. (Received 12 July 1995; accepted 21 November 1995) This work was supported by the National Science Foundation under Grant No. DMR-9503210. We also acknowledge the expert technical assistance of M. Easterbrook and C. M. Garland.Attached Files
Published - HEGapl96.pdf
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Additional details
- Eprint ID
- 3360
- Resolver ID
- CaltechAUTHORS:HEGapl96
- NSF
- DMR-9503210
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2006-06-01Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field