Nanocrystal seeding: A low temperature route to polycrystalline Si films

Abstract

A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540–575 °C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei ("seeds"). The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a separate thermal chemical vapor deposition (CVD) step, with growth rates 10–100 times higher than similar CVD growth rates on crystal Si. Grain size and CVD growth rates are dependent on seed coverage, for seed coverage <0.2 monolayers.

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