Published January 1975
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Journal Article
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Studies on the Al2O3–Ti–Mo–Au metallization system
Chicago
Abstract
The behavior of Ti–Mo–Au metallization on Al2O3 and C has been investigated by backscattering spectrometry. Results show that Mo–Au bimetal films typically mix during deposition. Diffusion of Ti in Mo film occurs at 600°C, but is inhibited by the presence of oxygen in the Ti film. Even 1000 Å of Mo is not a barrier against interdiffusion of Ti and Au during 20–min anneals at 600°C. The amount of mixing observed also depends on the nature of the substrate which supports the Ti–Mo–Au metallization.
Additional Information
© 1975 American Vacuum Society. (Received 19 August 1974; final form 27 September 1974) We would like to thank to express our grateful appreciation to Motorola, Scottsdale, Arizona, for their participation in this project.Files
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