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Published July 1, 1983 | Published
Journal Article Open

n-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode

Abstract

n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm² at 88 mW/cm² of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm²) to electricity, with open circuit voltages Voc of 0.70–0.72 V, short circuit currents of 16–17 mA/cm², and fill factors of 0.52–0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

Additional Information

© 1983 American Institute of Physics. Received 10 January 1983; accepted 13 April 1983. We thank G. Cogan, J. Gibbons, and G. Moddel of SERA Corp., Santa Clara, CA for many helpful discussions and for the use of evaporation facilities.

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August 22, 2023
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