Numerical modeling of the filament-assisted diamond growth environment
- Creators
- Goodwin, D. G.
- Gavillet, G. G.
Abstract
A numerical model of the filament-assisted diamond growth environment has been developed and used to calculate temperature, velocity, and species concentration profiles, accounting both for transport and detailed chemical kinetics. The computed hydrocarbon concentrations agree well with previously measured values, when allowance is made for 3D effects not included in our model. Upper-bound, diffusion-limited film growth rates for various assumed growth species have been computed, and it has been found no hydrocarbon species other than CH3, C2H2, or CH4 can account for measured diamond growth rates. The effect of thermal diffusion on H-atom profiles has been examined, and found to be only 10%. Although the environment is far from thermodynamic equilibrium, several reactions are close to partial equilibrium throughout the region from the filament to the substrate. It is also shown that homogeneous H-atom recombination is too slow to explain the experimentally observed decrease in the concentration of H with increasing initial methane concentration.
Additional Information
Copyright © 1990 American Institute of Physics. (Received 8 May 1990; accepted 27 August 1990) This work is supported in part by the Office of Naval Research, Contract No. N00014-90-J-1386.Files
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Additional details
- Eprint ID
- 8808
- Resolver ID
- CaltechAUTHORS:GOOjap90
- Created
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2007-09-18Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field