Published July 15, 1991
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Journal Article
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Simulations of high-rate diamond synthesis: Methyl as growth species
- Creators
- Goodwin, D. G.
Chicago
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Abstract
The results of numerical simulations of two high-rate diamond growth environments (oxygen-acetylene torch and dc arcjet) are reported. The calculations account in detail for boundary-layer transport, gas-phase chemistry, and gas-surface chemistry. Diamond growth rates are calculated self-consistently with the gas-phase concentrations, using a recently proposed methyl growth mechanism. The calculated growth rates agree well with the measured values, indicating that this growth mechanism can account for both high- and low-rate diamond growth.
Additional Information
Copyright © 1991 American Institute of Physics. Received 4 March 1991; accepted 15 April 1991. The author would like to acknowledge Dr. Stephen Harris for enlightening discussions regarding diamond growth kinetics. This work has been supported, in part, by the Office of Naval Research and the National Science Foundation.Files
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- Eprint ID
- 4735
- Resolver ID
- CaltechAUTHORS:GOOapl91
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2006-09-05Created from EPrint's datestamp field
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