Published August 1, 1972
| public
Journal Article
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Optical waveguiding in proton-implanted GaAs
- Creators
- Garmire, E.
- Stoll, H.
- Yariv, A.
- Hunsperger, R. G.
Abstract
We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15-µ guided-wave absorption.
Additional Information
©1972 The American Institute of Physics. Received 29 March 1972. Research at California Institute of Technology supported by the Nstional Science Foundation.Files
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Additional details
- Eprint ID
- 3653
- Resolver ID
- CaltechAUTHORS:GARapl72
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2006-06-24Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field